 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| FDN5632N_F085 N-Channel Logic Level PowerTrench(R) MOSFET September 2008 FDN5632N_F085 (R) N-Channel Logic Level PowerTrench MOSFET 60V, 1.6A, 98m Features RDS(on) = 98m at VGS = 4.5V, ID = 1.6A RDS(on) = 82m at VGS = 10V, ID = 1.7A Typ Qg(TOT) = 9.2nC at VGS = 10V Low Miller Charge Qualified to AEC Q101 RoHS Compliant tm Applications DC/DC converter Motor Drives (c)2008 Fairchild Semiconductor Corporation FDN5632N_F085 Rev. A (W) 1 www.fairchildsemi.com FDN5632N_F085 N-Channel Logic Level PowerTrench(R) MOSFET MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID PD Gate to Source Voltage Drain Current Continuous (VGS = 10V) Pulsed Power Dissipation Parameter Ratings 60 20 1.7 10 1.1 -55 to +150 Units V V A W oC TJ, TSTG Operating and Storage Temperature Thermal Characteristics RJC RJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 75 111 o C/W oC/W Package Marking and Ordering Information Device Marking 5632 Device FDN5632N_F085 Package SSOT3 Reel Size 7" Tape Width 8mm Quantity 3000 units Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V VDS = 48V, VGS = 0V VGS = 20V TA = 125oC 60 1 250 100 V A nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250A ID = 1.7A, VGS= 10V ID = 1.6A, VGS= 6V rDS(on) Drain to Source On Resistance ID = 1.6A, VGS= 4.5V ID = 1.7A, VGS= 10V, TA = 150oC 1 2.0 57 62 70 107 3 82 88 98 135 m V Dynamic Characteristics Ciss Coss Crss RG Qg(TOT) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 15V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0 to 10V VDD = 20V ID = 1.7A 475 60 30 1.4 9.2 1.5 1.4 12 pF pF pF nC nC nC FDN5632N_F085 Rev. A (W) 2 www.fairchildsemi.com FDN5632N_F085 N-Channel Logic Level PowerTrench(R) MOSFET Electrical Characteristics TA = 25oC unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 30V, ID = 1.0A VGS = 10V, RGEN = 6 15 1.7 5.2 1.3 30 12.9 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 1.7A ISD = 0.85A ISD = 1.7A, dISD/dt = 100A/s 0.8 0.8 16.0 7.9 1.25 1.0 21 10.3 V ns nC This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDN5632N_F085 Rev. A (W) 3 www.fairchildsemi.com FDN5632N_F085 N-Channel Logic Level PowerTrench(R) MOSFET Typical Characteristics POWER DISSIPATION MULTIPLIER 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE(oC) 150 3 CURRENT LIMITED BY PACKAGE ID, DRAIN CURRENT (A) 2 VGS = 10V 1 VGS = 4.5V RJA = 111 C/W o 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE(oC) Figure 1. Normalized Power Dissipation vs Ambient Temperature 2 DUTY CYCLE - DESCENDING ORDER Figure 2. Maximum Continuous Drain Current vs Ambient Temperature 1 NORMALIZED THERMAL IMPEDANCE, ZJA D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE o RJA = 111 C / W 0.01 10 -3 10 -2 10 -1 10 10 t, RECTANGULAR PULSE DURATION(s) 0 1 10 2 10 3 10 4 Figure 3. Normalized Maximum Transient Thermal Impedance 100 VGS = 10V TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - TC 125 IDM, PEAK CURRENT (A) 10 SINGLE PULSE o RJA = 111 C / W 1 -3 10 10 -2 10 -1 1 10 t, RECTANGULAR PULSE DURATION(s) 10 2 10 3 10 4 Figure 4. Peak Current Capability FDN5632N_F085 Rev. A (W) 4 www.fairchildsemi.com FDN5632N_F085 N-Channel Logic Level PowerTrench(R) MOSFET Typical Characteristics 30 ID, DRAIN CURRENT (A) 12 ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 10 100us 9 VDD = 5V 1 1ms 10ms 100ms SINGLE PULSE TJ = MAX RATED TA = 25 C o 6 TJ = 25oC TJ = -55oC TJ = 150oC 0.1 0.01 1s DC 3 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 0.001 0.01 0 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 5 0.1 1 10 100 300 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 5. Forward Bias Safe Operating Area 12 VGS = 10V Figure 6. Transfer Characteristics 200 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) VGS = 6V ID = 1.7A ID, DRAIN CURRENT (A) 9 VGS = 5V VGS = 4.5V VGS = 3.5V 150 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 6 VGS = 4V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 100 TJ = 150oC 3 VGS = 3V 50 TJ = 25oC 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 7. Saturation Characteristics Figure 8. Drain to Source On-Resistance Variation vs Gate to Source Voltage 1.4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 1.7A VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = VDS NORMALIZED GATE THRESHOLD VOLTAGE 1.2 1.0 0.8 0.6 0.4 -80 ID = 250A -40 0 40 80 120 TJ, JUNCTION TEMPERATURE(oC) 160 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE(oC) 160 Figure 9. Normalized Drain to Source On Resistance vs Junction Temperature Figure 10. Normalized Gate Threshold Voltage vs Junction Temperature FDN5632N_F085 Rev. A (W) 5 www.fairchildsemi.com FDN5632N_F085 N-Channel Logic Level PowerTrench(R) MOSFET Typical Characteristics 1.15 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A 1000 CAPACITANCE (pF) 1.10 1.05 1.00 0.95 Ciss 100 Coss f = 1MHz VGS = 0V Crss 0.90 -80 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160 10 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 Figure 11. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10 ID = 1.7A Figure 12. Capacitance vs Drain to Source Voltage VGS, GATE TO SOURCE VOLTAGE(V) 8 6 VDD = 20V VDD = 30V 4 VDD = 40V 2 0 0 3 6 9 Qg, GATE CHARGE(nC) 12 Figure 13. Gate Charge vs Gate to Source Voltage FDN5632N_F085 Rev. A (W) 6 www.fairchildsemi.com TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM * TM (R) Fairchild Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM (R) F-PFSTM FRFET(R) SM Global Power Resource Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM TM Saving our world, 1mW/W/kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R) The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC Ultra FRFETTM UniFETTM VCXTM VisualMaxTM (R) PDP SPMTM Power-SPMTM * EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete Product Status Formative / In Design First Production Full Production Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I36 (c) 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com |
Price & Availability of FDN5632NF085
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |